AUIRFP2602 mosfet equivalent, power mosfet.
l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l .
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon a.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 214.51KB)