IS66WV51216DBLL
FEATURES
- High-speed access time:
- 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)
- 55ns (IS66/67WV51216DBLL)
- CMOS low power operation
- Single power supply
- Vdd = 1.7V-1.95V (IS66WV51216 ALL)
- Vdd = 2.5V-3.6V (IS66/67WV51216 BLL)
- Three state outputs
- Data control for upper and lower bytes
- Industrial temperature available
- Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is
(deselected) or when CS1 is , CS2 is and both
LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and...
