ITCH42008E2 fet equivalent, rf power ldmos fet.
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift.
with frequencies from 500MHz to 4200 MHz
*Typical Performance (On Innogration fixture with device soldered):
VDD =.
The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 4200 MHz
*Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ .
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