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RF Transistor

ITCH22210B2 Innogration

ITCH22210B2 High Power RF LDMOS FET

ITCH22210B2 Avg. rating / M : star-14

datasheet Download

ITCH22210B2 Datasheet

Features and benefits


• High Efficiency and Linear Gain Operations
• Integrated ESD Protection
• Internally Matched for Ease of Use
• Excellent thermal stability, low HCI drift.

Application

with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station m.

Image gallery

ITCH22210B2 ITCH22210B2 ITCH22210B2

TAGS
ITCH22210B2
High
Power
LDMOS
FET
ITCH22210B2E
ITCH22120B2
ITCH22120B2E
Innogration
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