ITCH22210B2 - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH22210B2
Manufacturer	Innogration
File Size	936.51 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH22210B2 Datasheet
Additional preview pages of the ITCH22210B2 datasheet.

Product details

Description

The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Published: Aug 5, 2018 |