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ITCH22160B4E Datasheet, Innogration

ITCH22160B4E fet equivalent, high power rf ldmos fet.

ITCH22160B4E Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 928.63KB)

ITCH22160B4E Datasheet

Features and benefits


* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift.

Application

with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station m.

Description

The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base .

Image gallery

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TAGS

ITCH22160B4E
High
Power
LDMOS
FET
Innogration

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