ITCH22180B2 - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH22180B2
Manufacturer	Innogration
File Size	294.16 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH22180B2 Datasheet
Additional preview pages of the ITCH22180B2 datasheet.

Product details

Description

The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .Frequency Gp (dB) P-1dB (dBm) ηD@P-1 (%) P-3dB (dBm)

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negativ.

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Published: Aug 5, 2018 |