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ITCH22180B2 - High Power RF LDMOS FET

Description

The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negativ.

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Datasheet Details

Part number ITCH22180B2
Manufacturer Innogration
File Size 294.16 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH22180B2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH22180B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22180B2 •Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (dB) P-1dB (dBm) ηD@P-1 (%) P-3dB (dBm) ηD@P-3 (%) 2110 MHz 17.8 52.5 51.8 53.6 55.5 2140 MHz 17.9 52.3 51.5 53.5 55.5 2170 MHz 17.9 52.0 51.2 53.2 55.
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