ITCH22120B2 fet equivalent, high power rf ldmos fet.
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift.
with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station m.
The ITCH22120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 882.72KB)