PTFB183408SV transistor equivalent, high power rf ldmos field effect transistor.
include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides e.
in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pac.
The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless.
Image gallery
TAGS
Download