PTFB191501E fets equivalent, thermally-enhanced high power rf ldmos fets.
include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, t.
from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with s.
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted an.
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