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PTFB183404E - High Power RF LDMOS Field Effect Transistors

Description

The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 30 -35 IMD.

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Datasheet Details

Part number PTFB183404E
Manufacturer Infineon
File Size 590.61 KB
Description High Power RF LDMOS Field Effect Transistors
Datasheet download datasheet PTFB183404E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.
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