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PTFB183404E Datasheet, Infineon

PTFB183404E transistors equivalent, high power rf ldmos field effect transistors.

PTFB183404E Avg. rating / M : 1.0 rating-11

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PTFB183404E Datasheet

Features and benefits

include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these d.

Application

in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pac.

Description

The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pack.

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TAGS

PTFB183404E
High
Power
LDMOS
Field
Effect
Transistors
Infineon

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