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PTFB183404E High Power RF LDMOS Field Effect Transistors

PTFB183404E Description

PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 * 1880 MHz .
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 M.

PTFB183404E Features

* include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-

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High Power LDMOS Field Effect Transistors Infineon
Infineon PTFB183404E-like datasheet