PTFB192503FL fets equivalent, thermally-enhanced high power rf ldmos fets.
include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMO.
in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and.
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth a.
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