PTVA093002TC fet equivalent, thermally-enhanced high power rf ldmos fet.
dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent therm.
it can be used as single-ended or in a Doherty configuration. It features dual-path design, input matching, and a therma.
The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design, input matching, and a thermally-enhanced sur.
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