PTFB213208FV fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides e.
in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pac.
The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless.
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