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PTFB213004F - High Power RF LDMOS Field Effect Transistor

Description

The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band.

Features

  • include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz bandwidth -10 50 -20 40 Efficiency -30 30 -40 ACP low -50 -60 34 ACP up 38 42 46 50 Output Power, avg. (dBm) 20 10 0 54 Features.
  • Broadband internal matching.
  • Enhanced for use.

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Datasheet Details

Part number PTFB213004F
Manufacturer Infineon
File Size 395.40 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFB213004F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz bandwidth -10 50 -20 40 Efficiency -30 30 -40 ACP low -50 -60 34 ACP up 38 42 46 50 Output Power, avg.
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