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PTFB213004F Datasheet, Infineon

PTFB213004F transistor equivalent, high power rf ldmos field effect transistor.

PTFB213004F Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 395.40KB)

PTFB213004F Datasheet
PTFB213004F
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 395.40KB)

PTFB213004F Datasheet

Features and benefits

include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain.

Description

The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceram.

Image gallery

PTFB213004F Page 1 PTFB213004F Page 2 PTFB213004F Page 3

TAGS

PTFB213004F
High
Power
LDMOS
Field
Effect
Transistor
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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