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PTFB213004F Datasheet High Power RF LDMOS Field Effect Transistor

Manufacturer: Infineon

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Datasheet Details

Part number PTFB213004F
Manufacturer Infineon
File Size 395.40 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFB213004F Datasheet

General Description

The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band.

Overview

PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170.

Key Features

  • include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz bandwidth -10 50 -20 40 Efficiency -30 30 -40 ACP low -50 -60 34 ACP up 38 42 46 50 Output Power, avg. (dBm) 20 10 0 54 Features.
  • Broadband internal matching.
  • Enhanced for use.

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