PTFB213004F - High Power RF LDMOS Field Effect Transistor

Product Overview

Infineon

Part number	PTFB213004F
Manufacturer	Infineon
File Size	395.40 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFB213004F Datasheet
Additional preview pages of the PTFB213004F datasheet.

The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band.

include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz bandwidth -10 50 -20 40 Efficiency -30 30 -40 ACP low -50 -60 34 ACP up 38 42 46 50 Output Power, avg. (dBm) 20 10 0 54 Features.
Broadband internal matching.
Enhanced for use.

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Published: Nov 27, 2016 |