PTFB210801FA fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provid.
in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pac.
The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with earless flanges..
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