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PTFB211501E Datasheet, Infineon

PTFB211501E fets equivalent, thermally-enhanced high power rf ldmos fets.

PTFB211501E Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 349.42KB)

PTFB211501E Datasheet

Features and benefits

include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package .

Application

in the 2110
  – 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced cera.

Description

The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110
  – 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced cerami.

Image gallery

PTFB211501E Page 1 PTFB211501E Page 2 PTFB211501E Page 3

TAGS

PTFB211501E
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

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