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Infineon Technologies Electronic Components Datasheet

PTFB093608SV Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTFB093608SV
Thermally-Enhanced High Power RF LDMOS FET
320 W, 28 V, 920 – 960 MHz
Description
The PTFB093608SV is an LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 920 to 960
MHz frequency band. Features include input and output matching,
high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon’s advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB093608SV
Package H-37275G-6/2
Two-carrier WCDMA 3GPP Drive Up
VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
21.0
60
20.5
50
20.0
Gain
19.5
40
30
19.0
20
18.5
18.0
35
Efficiency
40 45 50
Output Power Avg. (dBm)
10
0
55
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
and Doherty applications
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
960 MHz, 28 V, device leads in gullwing
configuration
- Average output power = 160 W
- Gain = 19 dB
- Efficiency = 40%
• Integrated ESD protection
• Low thermal resistance
• Capable of handling 10:1 VSWR @ 32 V, 960 MHz,
+3 dB Input Overdrive = 500 W (CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (device with straight leads, tested in Infineon test fixture)
VDD = 28 V, IDQ = 2.8 A, POUT = 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 dB @
0.01% CCDF probability
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
18 20 — dB
hD
33.5
34
%
Adjacent Channel Power Ratio
ACPR
— –36 –31.5 dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 05, 2015-01-22


Infineon Technologies Electronic Components Datasheet

PTFB093608SV Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFB093608SV
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 2.8 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.5
Typ
0.05
3.9
Max
1.0
10.0
4.5
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 360 W CW)
Symbol Value
VDSS
VGS
TJ
TSTG
RqJC
65
–6 to +10
200
–40 to +150
0.12
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version Order Code
Package
Package Description Shipping
PTFB093608SV V2 R250 PTFB093608SVV2R250XTMA1 H-37275G-6/2 Earless flange
Tape & Reel, 250 pcs
Data Sheet
2 of 13
Rev. 05, 2015-01-22


Part Number PTFB093608SV
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 13 Pages
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