PTFB093608SV Datasheet | Infineon

Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 - 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB093608SV Package H-37275G-6/2 Gain (d B) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive Up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz, 3GPP WCDMA, PAR = 8 d B, 10 MHz carrier spacing, BW 3.84 MHz Gain 40 30 18.0 35 Efficiency 40 45 50 Output Power Avg. (d Bm) 0 55 Features - Broadband internal matching - Enhanced for use in DPD error correction systems and Doherty applications - Wide video bandwidth - Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 d B - Efficiency = 40% - Integrated ESD protection - Low thermal resistance - Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 d B Input Overdrive = 500 W (CW) output power - Pb-Free and Ro HS pliant RF Characteristics Single-carrier WCDMA Specifications (device with straight leads, tested in Infineon test fixture) VDD = 28 V, IDQ = 2.8 A, POUT = 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 d B @ 0.01% CCDF probability Characteristic...