• Part: PTFB093608SV
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 563.21 KB
PTFB093608SV Datasheet (PDF) Download
Infineon
PTFB093608SV

Overview

The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

  • 0 Gain
  • 5 40 30
  • 0 35 Efficiency 40 45 50 Output Power Avg. (dBm) 10 0 55 Features
  • Broadband internal matching
  • Enhanced for use in DPD error correction systems and Doherty applications
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 dB - Efficiency = 40%
  • Integrated ESD protection
  • Low thermal resistance
  • Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 dB Input Overdrive = 500 W (CW) output power