PTFB091802FC fet equivalent, thermally-enhanced high power rf ldmos fet.
include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perfor.
in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flang.
The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS proc.
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