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Infineon Technologies Electronic Components Datasheet

PTFB091507FH Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTFB091507FH
Thermally-Enhanced High Power RF LDMOS FET
160 W, 28 V, 920 – 960 MHz
Description
The PTFB091507FH is an LDMOS FET intended for use in multi-
standard cellular power amplifier applications in the 920 to 960 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excel-
lent thermal performance and superior reliability.
PTFB091507FH
Package H-34288-4/2
Power Sweep, CW
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
21.0
20.5
Gain
20.0
19.5
19.0
18.5
18.0
41
Efficiency
43 45 47 49 51
Output Power (dBm)
70
60
50
40
30
20
10
53
Features
Broadband internal matching
Wide video bandwidth
Typical CW performance, 960 MHz, 28 V
- Average output power = 160 W
- Gain = 19.5 dB
- Efficiency = 60%
Integrated ESD protection
Low thermal resistance
Thermally enhanced package is Pb-free and RoHS
compliant
Capable of handling 10:1 VSWR @ 28 V, 160 W
(CW) output power
RF Characteristics
Single-carrier WCDMA Specifications (not subject to production test; verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 50 W average
ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic
Symbol Min Typ Max Unit
Gain
Gps
— 20 — dB
Drain Efficiency
hD
— 38
%
Adjacent Channel Power Ratio
ACPR
— –36
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 03.1, 2016-06-09


Infineon Technologies Electronic Components Datasheet

PTFB091507FH Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFB091507FH
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 70 W avg, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Gain
Gps
Drain Efficiency
hD
Intermodulation Distortion
IMD
DC Characteristics
Min
19.5
43.5
Typ
20
45
–30
Max
–28
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 1.2 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.5
Typ
0.05
3.9
Max
1.0
1.0
4.5
1.0
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
Symbol Value
VDSS
VGS
TJ
TSTG
RqJC
65
–6 to +10
200
–40 to +150
0.31
Unit
dB
%
dBc
Unit
V
µA
µA
W
V
µA
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version Order Code
PTFB091507FH V1 R0 PTFB091507FHV1R0XTMA1
PTFB091507FH V1 R250 PTFB091507FHV1R250XTMA1
Package Description
H-34288-4/2, earless flange
H-34288-4/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 13
Rev. 03.1, 2016-06-09


Part Number PTFB091507FH
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 13 Pages
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