PTFB091507FH - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

The PTFB091507FH is an.

include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power Sweep, CW VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 21.0 20.5 Gain 20.0 19.5 19.0 18.5 18.0 41 Efficiency 43 45 47 49 51 Output Power (dBm) 70 60 50 40 30 20 10 53 Features.
Broadband i.

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