• Part: PTFB090901FA
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 223.44 KB
PTFB090901FA Datasheet (PDF) Download
Infineon
PTFB090901FA

Description

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

Key Features

  • Input and output internal matching
  • Typical CW performance, 960 MHz, 28 V - Output power at P1dB = 90 W - Efficiency = 65%
  • Integrated ESD protection
  • Low - Pb-free and RoHS-pliant
  • 1.0 µA On-state Resistance VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V IDSS RDS(on)
  • 0.123 - Ω Operating Gate Voltage VDS = 28 V, IDQ = 650 mA VGS
  • 3.8 - V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS