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Infineon Technologies Electronic Components Datasheet

PTFB090901FA Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 920 to 960 MHz frequency band. Features in-
clude input and output matching, high gain and thermally-enhanced
packages. Manufactured with Infineon's advanced LDMOS pro-
cess, these devices provide excellent thermal performance and
superior reliability.
PTFB090901EA
Package H-36265-2
PTFB090901FA
Package H-37265-2
PTFB090901EA
PTFB090901FA
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
23 60
22
Gain
21
50
40
20 30
19 20
Efficiency
18 10
17
b090901 gr 1
0
31 33 35 37 39 41 43 45 47 49
Output Power, Avg. (dBm)
Features
• Input and output internal matching
• Typical CW performance, 960 MHz, 28 V
- Output power at P1dB = 90 W
- Efficiency = 65%
• Typical two-carrier WCDMA performance,
960 MHz, 28 V
- Average output power = 20 W
- Linear Gain = 20.8 dB
- Efficiency = 35%
- Intermodulation distortion = –35 dBc
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS-compliant
• Capable of handling 10:1 VSWR @ 28 V, 90 W (CW)
output power
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 650 mA, POUT = 25 W average, ƒ = 960 MHz
3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz
Characteristic
Symbol
Min
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
ηD
ACPR
19
36
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Typ Max Unit
19.5 —
dB
40 — %
–35 –31.5 dBc
Rev. 04, 2012-02-23


Infineon Technologies Electronic Components Datasheet

PTFB090901FA Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Target RF Characteristics (cont.)
Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 650 mA, POUT = 70 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
— 19.5 —
dB
— 48 — %
— –30 — dBc
DC Characteristics
Characteristic
Conditions
Symbol Min Typ Max Unit
Drain-source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
— — 1.0 µA
On-state Resistance
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
IDSS
RDS(on)
— — 10.0 µA
— 0.123 —
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 650 mA
VGS
— 3.8 —
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
— — 1.0 µA
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 85 W CW)
Symbol
VDSS
VGS
TJ
TSTG
RθJC
Value
65
–6 to +10
200
–40 to +150
0.73
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB090901EA V1
PTFB090901EA V1 R250
PTFB090901FA V1
PTFB090901FA V1 R250
Order Code
PTFB090901EAV1XWSA1
PTFB090901EAV1R250XTMA1
PTFB090901FAV1XWSA1
PTFB090901FAV1R250XTMA1
Package
H-36265-2
H-36265-2
H-37265-2
H-37265-6/2
Package Description
Ceramic open-cavity, bolt-down
Ceramic open-cavity, bolt-down
Ceramic open-cavity, earless
Ceramic open-cavity, earless
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 04, 2012-02-23


Part Number PTFB090901FA
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 14 Pages
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