PTFA091503EL - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Part number	PTFA091503EL
Manufacturer	Infineon
File Size	544.60 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA091503EL Datasheet
Additional preview pages of the PTFA091503EL datasheet.

The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84MHz Bandwidth 60 50 -30 Two-carrier WCDMA Performance.
Broadband internal matching.
Typical two-carrier WCDMA performance at 960 MHz,.

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Published: Aug 6, 2013 |