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PTFA091201F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA091201F datasheet PDF. This datasheet also covers the PTFA091201E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz Features.
  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output po.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA091201E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA091201F
Manufacturer Infineon
File Size 285.00 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA091201F Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs
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Full PDF Text Transcription

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PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.
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