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PTFA091201GL - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

Features

  • include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz 0 55 50.
  • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and R.

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Datasheet Details

Part number PTFA091201GL
Manufacturer Infineon
File Size 308.71 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA091201GL Datasheet

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Full PDF Text Transcription

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PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.
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