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PTFA091203EL - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

Features

  • internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. . PTFA091203EL Package H-33288-6 Features Two-carrier WCDMA Performance 3GPP signal, 10 MHz carrier spacing, BW = 3.84 MHz, PAR = 8 dB VDD = 30 V , IDQ = 1.05 A.
  • Broadband internal matching -15 Intermodulation Distortion (dBc) -20 -25 -30 -35 -40 -45 -50 -55 Drain Efficiency (%).

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Datasheet Details

Part number PTFA091203EL
Manufacturer Infineon
File Size 437.49 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA091203EL Datasheet

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Full PDF Text Transcription

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PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.. PTFA091203EL Package H-33288-6 Features Two-carrier WCDMA Performance 3GPP signal, 10 MHz carrier spacing, BW = 3.84 MHz, PAR = 8 dB VDD = 30 V , IDQ = 1.
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