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PTFA091201HL Datasheet Thermally-Enhanced High Power RF LDMOS FETs

Manufacturer: Infineon

Overview: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960.

Download the PTFA091201HL datasheet PDF. This datasheet also includes the PTFA091201GL variant, as both parts are published together in a single manufacturer document.

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General Description

The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

Key Features

  • include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz 0 55 50.
  • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and R.

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