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PTFA091201HL Datasheet, Infineon

PTFA091201HL fets equivalent, thermally-enhanced high power rf ldmos fets.

PTFA091201HL Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 308.71KB)

PTFA091201HL Datasheet
PTFA091201HL Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 308.71KB)

PTFA091201HL Datasheet

Features and benefits

include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these dev.

Application

in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packa.

Description

The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with.

Image gallery

PTFA091201HL Page 1 PTFA091201HL Page 2 PTFA091201HL Page 3

TAGS

PTFA091201HL
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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