PTFA091201HL
Description
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges.
Key Features
- Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 18.5 dB - Efficiency = 44% Typical CW performance - Output power at P-1dB = 135 W - Gain = 17 dB - Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power *
- Drain Efficiency (%) Modulation Spectrum (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 36 38 40 42 44 46 48 50 45 Efficiency 40 35 400 KHz 30 25 20
- 600 KHz 15 10 * *
- Output Power, avg. (dBm) RF Characteristics EDGE Measurements (not subject to production test-verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 50 W (AVG), ƒ = 959.8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated Symbol
