PTFA091201HL Description
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
PTFA091201HL Key Features
- Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS pliant Broadband internal
- Average output power = 50 W
- Gain = 18.5 dB
- Efficiency = 44% Typical CW performance
- Output power at P-1dB = 135 W
- Gain = 17 dB
- Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
- 600 KHz
- Output Power, avg. (dBm)
- See Infineon distributor for future availability
PTFA091201HL Applications
- Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS pliant Broadband internal matching Typical EDGE performance