PTFA091201HL
Description
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2
Features
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 m A, ƒ = 959.8 MHz
0 55 50
- Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and Ro HS pliant Broadband internal matching Typical EDGE performance
- Average output power = 50 W
- Gain = 18.5 d B
- Efficiency = 44% Typical CW performance
- Output power at P- 1d B = 135 W
- Gain = 17 d B
- Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of...
