Datasheet Summary
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920
- 960 MHz
Description
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2
Features
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz
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