Part PTFA091201HL
Description Thermally-Enhanced High Power RF LDMOS FETs
Manufacturer Infineon
Size 308.71 KB
Infineon

PTFA091201HL Overview

Description

The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges.

Key Features

  • Average output power = 50 W
  • Gain = 18.5 dB
  • Efficiency = 44% Typical CW performance
  • Output power at P–1dB = 135 W
  • Gain = 17 dB
  • Drain Efficiency (%) Modulation Spectrum (dB)
  • 600 KHz 15 10
  • Unit % dBc dBc dB % ηD *See Infineon distributor for future availability. ESD: Electrosta