• Part: PTFA091201HL
  • Description: Thermally-Enhanced High Power RF LDMOS FETs
  • Manufacturer: Infineon
  • Size: 308.71 KB
PTFA091201HL Datasheet (PDF) Download
Infineon
PTFA091201HL

Description

The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

Key Features

  • EDGE Modulation Spectrum Performance
  • Drain Efficiency (%)
  • Output Power, avg. (dBm)
  • See Infineon distributor for future availability