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IPB025N08N3 - MOSFET

Download the IPB025N08N3 datasheet PDF. This datasheet also covers the IPB025N08N3G variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB025N08N3G-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
IPB025N08N3G MOSFET
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IPB025N10N3G MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB025N08N3G MOSFET OptiMOSª3Power-Transistor,80V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 2.5 mΩ ID 120 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB025N08N3 G Package PG-TO 263 Marking 025N08N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 2016-03-31 OptiMOSª3Power-Transistor,80V IPB025N08N3G TableofContents Description . . . . .