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IPB025N08N3G - MOSFET

Description

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Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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IPB025N08N3G MOSFET OptiMOSª3Power-Transistor,80V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 2.5 mΩ ID 120 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB025N08N3 G Package PG-TO 263 Marking 025N08N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 2016-03-31 OptiMOSª3Power-Transistor,80V IPB025N08N3G TableofContents Description . . . . . . .
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