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IGC114T170S8RM Datasheet, Infineon

IGC114T170S8RM igbt equivalent, igbt.

IGC114T170S8RM Avg. rating / M : 1.0 rating-11

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IGC114T170S8RM Datasheet

Features and benefits


* 1700V Trench + Field stop technology
* low switching losses
* soft turn off
* positive temperature coefficient
* easy paralleling This chip is use.

Application


* drives Chip Type VCE IC Die Size IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2 C G E Package sawn on foil Mec.

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726.

Image gallery

IGC114T170S8RM Page 1 IGC114T170S8RM Page 2 IGC114T170S8RM Page 3

TAGS

IGC114T170S8RM
IGBT
IGC114T170S8RH
IGC11T120T6L
IGC11T120T8L
Infineon

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