IGC109T120T6RL igbt equivalent, igbt.
* 1200V Trench + Field stop technology
* low switching losses
* positive temperature coefficient
* easy paralleling
This chip is used for:
* low / m.
* low / medium power drives
C G
E
Chip Type
VCE ICn
Die Size
IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2
Packa.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld
Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 65.84KB)