IGC109T120T6RM igbt equivalent, igbt.
* 1200V Trench + Field stop technology
* low switching losses
* soft turn off
* positive temperature coefficient
* easy paralleling
This chip is use.
* medium power drives
C G
E
Chip Type
VCE ICn
Die Size
IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2
Package saw.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld
Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 .
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