IGC109T120T6RH datasheet, igbt equivalent, Infineon

Features and benefits

* 1200V Trench + Field stop technology
* low VCE(sat)
* soft turn off
* positive temperature coefficient
* easy paralleling This chip is used for: <.

Application

* medium / high power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 Pack.

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 .

Image gallery