IDK12G65C5 diode equivalent, silicon carbide diode.
* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independ.
* Breakdown voltage tested at 27 mA2)
* Optimized for high temperature operation
Benefits
* System efficien.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already
introduced with G3 is now combined with a new, more compact design and thin-
wafer.
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