IDK03G65C5 Datasheet Silicon Carbide Diode

Manufacturer: Infineon

Overview: SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDK03G65C5 Final Data Sheet Rev. 2.1, 2017-08-11 Power Management & Multimarket 5th Generation thinQ!

Datasheet Details

Part number	IDK03G65C5
Manufacturer	Infineon
File Size	442.97 KB
Description	Silicon Carbide Diode
Datasheet	IDK03G65C5-Infineon.pdf

General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology.

The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).

Key Features

Revolutionary semiconductor material - Silicon Carbide.
Benchmark switching behavior.
No reverse recovery/ No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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