Datasheet Summary
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
Final Data Sheet
Rev. 2.1, 2017-08-11
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now bined with a new, more pact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has...