* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independ.

* Breakdown voltage tested at 11 mA2)
* Optimized for high temperature operation Benefits
* System efficien.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer .

IDK05G120C5

IDK02G120C5

IDK02G65C5

IDK03G65C5

IDK04G65C5

IDK06G65C5

IDK08G120C5

IDK08G65C5

IDK09G65C5

IDK10G120C5

IDK10G65C5

IDK12G65C5

ID100

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