Datasheet Details
| Part number | IDK08G120C5 |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.01 MB |
| Description | 1200V Schottky Diode |
| Datasheet |
 IDK08G120C5 Datasheet
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General Description
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode
Key Features
- Revolutionary semiconductor material - Silicon Carbide.
- No reverse recovery current / no forward recovery.
- Temperature independent switching behaviour.
- Low forward voltage even at high operating temperature.
- Tight forward voltage distribution.
- Excellent thermal performance 1 2.
- Extended surge current capability.
- Specified dv/dt ruggedness.
- Pb-free lead plating; RoHS compliant Potential.