* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independ.

* Breakdown voltage tested at 4.5 mA2)
* Optimized for high temperature operation Benefits
* System effici.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer tec.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts