AUIRFR2607Z mosfet equivalent, power mosfet.
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 655.25KB)