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AUIRFR2307Z - HEXFET Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Features

  • AUIRFR2307Z HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) max. ID (Silicon Limited) 75V 16mΩ 53A 42A G S ID (Package Limited) D S.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AUTOMOTIVE GRADE PD - 97546 Features ● ● ● ● ● ● ● AUIRFR2307Z HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID (Silicon Limited) 75V 16mΩ 53A 42A G S ID (Package Limited) D S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .