Datasheet Summary
- 96323
AUTOMOTIVE MOSFET
HEXFET® Power MOSFET
Features l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified
- V(BR)DSS
75V 17.6mΩ 22mΩ
45A k 42A
RDS(on) typ.
G S max.
ID (Silicon Limited) ID (Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive...
