AUIRFR2905Z datasheet, mosfet equivalent, Infineon

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 649.87KB)

Features and benefits

* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
.

Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

Image gallery