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MJE243 - Silicon NPN Power Transistor

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A Complement to the PNP MJE253 Minimum Lot-to-Lot variations for robust device performance a

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isc Silicon NPN Power Transistor MJE243 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJE253 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 4 ICM Collector Current-Peak 8 IB Base Current 1 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ 1.
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