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MJE253 - Silicon PNP Power Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A Complement to the NPN MJE243 Minimum Lot-to-Lot variations for robust device performan

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJE243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.