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MJE200 - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) DC Current Gain- : hFE = 70(Min) @ IC= 500mA Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA High Current-Gain Bandwidth Product fT= 65MHz(Min) @ IC= 100mA Minimum Lot-to

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA ·High Current-Gain—Bandwidth Product fT= 65MHz(Min) @ IC= 100mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage,low-power,high-gain audio amplifier applications.