MJE200 - 5 AMPERE POWER TRANSISTORS

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MJE200
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	255.73 KB
Description	5 AMPERE POWER TRANSISTORS
Datasheet	MJE200 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MJE200	NPN Epitaxial Silicon Transistor	Fairchild
MJE200	Silicon NPN Power Transistor	Inchange Semiconductor
MJE200	COMPLEMENTARY SILICON POWER TRANSISTORS	Central Semiconductor
MJE200	Silicon NPN transistor	BLUE ROCKET ELECTRONICS
MJE200	Complementary Silicon Power Plastic Transistors	ON Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MJE210	5 AMPERE POWER TRANSISTORS
MJE2360T	NPN Silicon High Voltage Transistor
MJE2361T	NPN Silicon High Voltage Transistor
MJE240	(MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS
MJE241	(MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS
MJE242	(MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS
MJE243	4 AMPERE POWER TRANSISTORS
MJE244	(MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS
MJE250	(MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS
MJE251	(MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High DC Current Gain — hFE = 45 (Min) @ IC = 2.0 Adc High DC Current Gain — hFE = 10 (Min) @ IC = 5.0 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.75 Vdc (Max) @ IC = 2.