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MJE243 - NPN EPITAXIAL SILICON POWER TRANSISTOR

General Description

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Base Current Total Power Dissipation @ Tc=25 ºC Derate Above 25ºC Total Power Dissipation @ Ta=25 ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IB

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Datasheet Details

Part number MJE243
Manufacturer CDIL
File Size 148.87 KB
Description NPN EPITAXIAL SILICON POWER TRANSISTOR
Datasheet download datasheet MJE243 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package ECB Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Base Current Total Power Dissipation @ Tc=25 ºC Derate Above 25ºC Total Power Dissipation @ Ta=25 ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IB PD PD Tj, Tstg Value 100 100 7.0 4.0 8.0 1.0 15 0.12 1.5 0.