MJD128
MJD128 is Silicon PNP Darlington Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
: h FE = 1000(Min)@ IC= -4A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -120V(Min)
- DPAK for Surface Mount Applications
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-8
Collector Current-Peak
-16
Base Current-DC
Collector Power Dissipation
TC=25℃ Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
-120 20 1.75 150
Tstg
Storage Temperature...
