High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -120V(Min)
DPAK for Surface Mount Applications
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Designed for general purpose a
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -120V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
ICM
Collector Current-Peak
-16
IB
Base Current-DC
Collector Power Dissipation
PC
TC=25℃ Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
-120 20 1.
MJD128 Datasheet
