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MJD128 - Silicon PNP Darlington Power Transistor

MJD128 Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min). DPAK for Surface Mount.

MJD128 Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -120 VCEO Collector-Em

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Datasheet Details

Part number
MJD128
Manufacturer
Inchange Semiconductor
File Size
206.41 KB
Datasheet
MJD128-InchangeSemiconductor.pdf
Description
Silicon PNP Darlington Power Transistor

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Silicon PNP Darlington Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD128-like datasheet