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MJD128 - Silicon PNP Darlington Power Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose a

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Datasheet Details

Part number MJD128
Manufacturer Inchange Semiconductor
File Size 206.41 KB
Description Silicon PNP Darlington Power Transistor
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector Current-Peak -16 IB Base Current-DC Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature -120 20 1.
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