• Part: MJD128
  • Description: Silicon PNP Darlington Power Transistor
  • Manufacturer: Inchange Semiconductor
  • Size: 206.41 KB
Download MJD128 Datasheet PDF
MJD128 page 2
Page 2

Datasheet Summary

isc Silicon PNP Darlington Power Transistor DESCRIPTION - High DC Current Gain- : hFE = 1000(Min)@ IC= -4A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) - DPAK for Surface Mount Applications - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general purpose amplifier and low speed switching...