MJD122
FEATURES
- High DC Current Gain.
- Built-in a Damper Diode at E-C.
Pb
Lead-free
- Lead Formed for Surface Mount Applications.
- Straight Lead.
- plement to MJD127.
Production specification
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO VEBO IC ICP IB PC Tj ,Tstg
Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base Current Collector Power Dissipation Junction and Storage temperature range
100 100 5 8 16 120 1.5 -65 to +150
V V V A A m A W ℃
V/(W)029 Rev.A
.gmesemi.
Production specification
Epitaxial Planar NPN Transistor
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
UNIT
Collector-emitter sustaining voltage
VCEO(sus) IC=30m A,IB=0
Collector cut-off current
ICEO
VCE=50V,...
