MJD122
DESCRIPTION
- High DC current gain
- Built-in a damper diode at E-C
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
- plementary Pairs Simplifies Designs
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICm IB
TJ Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Junction Temperature
Storage Temperature Range
120 m A
20 W
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W isc website：.iscsemi.
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