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KTD2059 Datasheet, Inchange Semiconductor

KTD2059 transistors equivalent, silicon npn power transistors.

KTD2059 Avg. rating / M : 1.0 rating-12

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KTD2059 Datasheet

Application


*Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO .

Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
*Collector Power Dissipation- : PC= 30W@ TC= 25℃
*Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A)
*Complement to Type KTB1367
*Minimum Lot-to-.

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KTD2059 Page 1 KTD2059 Page 2

TAGS

KTD2059
Silicon
NPN
Power
Transistors
KTD2058
KTD2060
KTD2061
Inchange Semiconductor

Manufacturer


Inchange Semiconductor
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