KTD2060 transistors equivalent, silicon npn power transistors.
*Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Collector Power Dissipation-
: PC= 25W@ TC= 25℃
*Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A)
*Complement to Type KTB1368
*Minimum Lot-to-L.
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